SiC unido por reacción (RBSiC) / SiC recristalizado (RSiC)
Forma:
Redondo/Cuadrado/Rectangular/Personalizable
Temperatura máxima de trabajo:
1400 ℃ – 1700 ℃ (por grado de material)
Acabado superficial:
Mate As-fired / Molido fino / Mecanizado de precisión
Solicitud:
Recocido de obleas semiconductoras/sinterización de cerámica/horno de alta temperatura
Estructura:
Placa Plana / Con Borde Alzado / Ranurada / Apilable
Descripción de producto
Product Overview SiC Tray (Silicon Carbide Tray) is a high-performance high-temperature bearing component made of polycrystalline silicon carbide engineering ceramic, manufactured via advanced sintering processes including Reaction Bonded (RBSiC), Recrystallized (RSiC) and Silicon Nitride Bonded (N-SiC) technologies. As an upgraded alternative to traditional alumina ceramic trays and fused quartz trays, it features outstanding high-temperature resistance, excellent thermal