Device-Grade hBN Single Crystal for 2D Materials, Graphene Electronics and Deep-UV Applications

Device-Grade hBN Single Crystal for 2D Materials, Graphene Electronics and Deep-UV Applications

Device-Grade Hexagonal Boron Nitride (hBN) Single Crystal is a high-purity bulk crystal material grown using a proprietary atmospheric-pressure growth process. Designed specifically for advanced research and next-generation electronic and photonic devices, these crystals provide an ultra-clean, atomically flat platform for graphene heterostructures, van der Waals devices, nanophotonics, and deep ultraviolet optoelectronics.

The material exhibits exceptional crystal quality, low defect density, excellent dielectric strength, and outstanding optical properties. Independent third-party validation has demonstrated electronic device performance comparable to or exceeding the current academic benchmark established by leading hBN crystal producers.

Available as millimeter-scale bulk crystals with natural growth facets, Device-Grade hBN Single Crystal is an ideal substrate and encapsulation material for high-mobility graphene devices and emerging two-dimensional material systems.

Key Features

• High-quality single-crystal hexagonal boron nitride (hBN)
• Proprietary atmospheric-pressure crystal growth technology
• Device-grade crystal quality for advanced research applications
• Typical lateral crystal size ≥ 1 mm
• Excellent dielectric breakdown strength
• Ultra-low Raman linewidth indicating low defect density
• Suitable for graphene encapsulation and heterostructure fabrication
• Strong deep-UV emission around 215 nm
• High optical transparency and large single-domain regions
• Supplied in chip carrier packaging for convenient handling

Technical Specifications

Electrical Properties

Optical & Raman Properties

Device Performance (Reference)

Applications

Graphene Electronics

Device-grade hBN is widely used as an encapsulation layer and substrate material for graphene transistors, Hall devices, and high-frequency electronic components. Its atomically smooth surface minimizes charge scattering and enables ultra-high carrier mobility.

Two-Dimensional Heterostructures

The material serves as a critical building block in van der Waals heterostructures involving graphene, transition metal dichalcogenides (TMDs), and other emerging two-dimensional materials.

Nanophotonics

High-quality hBN supports phonon-polariton propagation and is increasingly utilized in nanophotonic devices, optical metasurfaces, and quantum photonics research.

Deep Ultraviolet Optoelectronics

With characteristic band-edge emission near 215 nm, hBN single crystals are promising materials for deep-UV emitters, detectors, and next-generation photonic systems.

Quantum Materials Research

Researchers use hBN as an ultra-clean dielectric platform for investigating novel quantum phenomena, including moiré superlattices, correlated electron systems, and quantum transport.

Advantages of Device-Grade hBN Single Crystal

Compared with conventional polycrystalline boron nitride materials, device-grade hBN single crystals provide:

• Lower defect density
• Larger single-crystal domains
• Superior electrical insulation
• Improved carrier mobility in graphene devices
• Better optical and luminescent performance
• Enhanced reproducibility for research and device fabrication

These characteristics make hBN one of the most important enabling materials for modern two-dimensional electronics and photonic technologies.

Packaging and Supply

Device-Grade hBN Single Crystals are supplied in protective chip carriers to ensure safe transportation and convenient laboratory handling. Each package typically contains 5–10 crystals with representative lateral dimensions exceeding 1 mm.

Custom crystal selection and research-grade material sourcing are available upon request.

FAQ

What is Device-Grade hBN Single Crystal?

Device-grade hBN is a high-purity, low-defect single crystal of hexagonal boron nitride specifically optimized for electronic, photonic, and quantum device fabrication.

Why is hBN used in graphene devices?

hBN provides an atomically smooth and electrically insulating surface that significantly improves graphene carrier mobility and device performance compared with conventional substrates.

Can hBN be used for deep ultraviolet applications?

Yes. High-quality hBN exhibits band-edge emission near 215 nm, making it attractive for deep-UV photonics, detectors, and optoelectronic devices.

What crystal size is available?

Standard device-grade crystals typically offer lateral dimensions greater than 1 mm. Larger crystals and custom selections may be available depending on production batches.

Is the material suitable for research and prototype development?

Yes. Device-grade hBN single crystals are widely used in academic research, advanced materials studies, graphene electronics, nanophotonics, and prototype device fabrication.