logo
Buen precio  en línea

Detalles de los productos

Created with Pixso. Hogar Created with Pixso. PRODUCTOS Created with Pixso.
substrato de cerámica
Created with Pixso. Ultra-Thin Silicon-Based Diamond Film for Advanced Semiconductor Thermal Management

Ultra-Thin Silicon-Based Diamond Film for Advanced Semiconductor Thermal Management

Nombre De La Marca: ZMSH
MOQ: 10
Tiempo De Entrega: 2-4 semanas
Condiciones De Pago: T/T
Información detallada
Lugar de origen:
Shangai, China
Material:
Diamante policristalino sobre silicio
Método de deposición:
MPCVD (deposición química de vapor de plasma por microondas)
Tipo de sustrato:
oblea de silicio
Diámetro de la oblea:
4", 6", 8"
Conductividad térmica:
Capa de diamante de alta conductividad térmica
Condición superficial:
Disponible tal como está crecido/pulido
Descripción de producto

Ultra-Thin Silicon-Based Diamond Film for Advanced Semiconductor Thermal Management 0Ultra-Thin Silicon-Based Diamond Film is an advanced thermal management material fabricated by directly growing polycrystalline diamond on silicon substrates using Microwave Plasma Chemical Vapor Deposition (MPCVD) technology. With a diamond layer thickness below 1 μm and exceptional thermal conductivity, this material provides an effective near-junction heat spreading solution for next-generation semiconductor devices.

Unlike conventional thermal interface materials, the diamond film is integrated directly onto the silicon wafer, allowing heat to be dissipated at the source before thermal accumulation affects device performance. The technology is fully compatible with existing semiconductor manufacturing processes, enabling seamless integration into RF, power electronics, photonics, and advanced packaging applications.


Key Features

Exceptional Thermal Conductivity

Diamond is the highest thermal conductivity material known today, enabling rapid lateral heat spreading and significantly reducing hotspot formation.

Ultra-Thin Diamond Layer

Diamond thickness can be controlled below 1 μm while maintaining excellent thermal performance and structural stability.

Wafer-Level Integration

Direct deposition on silicon wafers eliminates the need for additional thermal interface layers and reduces thermal resistance.

Semiconductor Process Compatibility

Compatible with standard silicon wafer processing, facilitating large-scale manufacturing and integration into existing production lines.

Large-Area Wafer Capability

Available on 4-inch, 6-inch, and 8-inch silicon substrates to support various semiconductor manufacturing requirements.

Improved Device Reliability

Lower operating temperatures contribute to enhanced performance stability, extended device lifetime, and improved power density.


Technical Specifications

Parameter Specification
Material Polycrystalline Diamond on Silicon
Deposition Method MPCVD (Microwave Plasma Chemical Vapor Deposition)
Substrate Type Silicon Wafer
Wafer Diameter 4", 6", 8"
Diamond Thickness < 1 μm
Thermal Conductivity High Thermal Conductivity Diamond Layer
Surface Condition As-Grown / Polished Available
Customization Thickness and wafer specifications available
Application Level Wafer-Level Thermal Management

Advantages Over Conventional Heat Spreaders

Feature Silicon-Based Diamond Film Conventional Heat Spreader
Thermal Conductivity Extremely High Moderate
Integration Level Direct Wafer-Level Package-Level
Thermal Resistance Very Low Higher
Thickness Ultra-Thin (<1 μm) Typically Tens to Hundreds of μm
Process Compatibility Excellent Limited
Heat Spreading Efficiency Superior Standard

Ultra-Thin Silicon-Based Diamond Film for Advanced Semiconductor Thermal Management 1Applications

RF Devices

Ideal for GaN RF amplifiers, microwave devices, and high-frequency communication systems where localized heating limits performance.

Power Semiconductors

Suitable for Si, SiC, and GaN power devices requiring efficient thermal dissipation under high-power operation.

Photonic Integrated Circuits

Improves thermal management for optical transceivers, lasers, modulators, and silicon photonics components.

AI and High-Performance Computing

Supports thermal control in advanced processors, accelerators, and high-density computing architectures.

Advanced Packaging

Can be integrated into heterogeneous integration, chiplet architectures, and advanced semiconductor packaging solutions.


Ultra-Thin Silicon-Based Diamond Film for Advanced Semiconductor Thermal Management 2Manufacturing Capability

Our advanced MPCVD platform supports:

  • 4-inch silicon-based diamond films
  • 6-inch silicon-based diamond films
  • 8-inch silicon-based diamond films
  • Ultra-thin diamond layers below 1 μm
  • Customized wafer specifications
  • Volume production capability

Strict process control ensures excellent film uniformity, thermal performance consistency, and scalable manufacturing for industrial applications.


Why Choose Our Silicon-Based Diamond Film?

  • Diamond thickness below 1 μm
  • Large-area 4", 6", and 8" wafer support
  • Direct wafer-level thermal solution
  • High thermal conductivity diamond layer
  • Semiconductor process compatible
  • Suitable for next-generation high-power and high-frequency devices
  • Custom engineering support available

FAQ

1: What is the primary advantage of ultra-thin silicon-based diamond film?

The primary advantage is its ability to provide near-junction heat spreading directly on the wafer surface, reducing thermal resistance and improving device performance before heat accumulates inside the chip.

2: Can the diamond film be integrated into existing semiconductor production lines?

Yes. The technology is designed to be compatible with conventional silicon wafer processing and can be integrated into existing semiconductor manufacturing workflows.

3: What wafer sizes are available?

Currently, silicon-based diamond films are available on 4-inch, 6-inch, and 8-inch silicon wafers, with customized specifications available upon request.