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Created with Pixso. High-Purity Semi-Insulating Silicon Carbide Substrates - Multi-Diameter Wafer Solutions ( 2" to 8" )

High-Purity Semi-Insulating Silicon Carbide Substrates - Multi-Diameter Wafer Solutions ( 2" to 8" )

Nombre De La Marca: ZMSH
Información detallada
Lugar de origen:
Porcelana
Certificación:
rohs
Material:
HPSI SiC
Calificación:
Primero/Dummy/Investigación
Tipo:
4h-semi
Orientación:
Se trata de:
Tamaño:
2"/3"/4"/6"/8"
Espesor:
500 ± 25 μm
TTV:
Se aplicarán las siguientes medidas:
Arco:
-25μm~25μm/ -35μm~35μm/ -45μm~45μm
abrigo:
Se aplicarán los siguientes requisitos:
Resaltar:

Semi-Insulating Silicon Carbide Substrates

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High-Purity Silicon Carbide Substrates

Descripción de producto
High-Purity Semi-Insulating Silicon Carbide Substrates - Multi-Diameter Wafer Solutions (2" to 8")
Product Summary

High-purity semi-insulating (HPSI) silicon carbide wafers represent advanced semiconductor substrate materials engineered for high-frequency, high-power, and elevated-temperature operational environments. Manufactured in 2-inch through 8-inch diameter configurations, these substrates are available in multiple quality tiers: Prime Grade (for production), Dummy Grade (for process verification), and Research Grade (for experimental purposes), addressing diverse requirements across industrial manufacturing and scientific research.

High-Purity Semi-Insulating Silicon Carbide Substrates - Multi-Diameter Wafer Solutions ( 2" to 8" ) 0

Technical Specifications
Parameter Specification
Crystal Type 4H-Semi-Insulating
Electrical Resistivity >10^5 Ω·cm
Standard Thickness 500 ± 25 μm
Crystallographic Orientation <0001> ± 0.25°
Thickness Variation (TTV) ≤ 5 μm
Surface Bow -25 to +25 μm
Wafer Warp ≤ 35 μm
Surface Roughness (Si-face) Ra ≤ 0.2 nm
Primary Application Areas
  • High-frequency communications infrastructure (5G base stations)
  • Aerospace and defense radar system components
  • Electric vehicle power conversion systems
  • Advanced semiconductor process development
  • Cutting-edge materials science research
Common Questions
What characterizes semi-insulating silicon carbide?

This material exhibits extremely high electrical resistivity, effectively minimizing parasitic current leakage in high-frequency and high-voltage applications.

Are customized specifications available?

Yes, we support tailored specifications including doping concentration, dimensional parameters, and surface characteristics for Prime and Research Grade products.

What differentiates Prime Grade from Dummy Grade?

Prime Grade wafers feature minimal defect density suitable for active device fabrication, while Dummy Grade provides economical solutions for process testing and equipment calibration.

How are products packaged for shipment?

Each wafer undergoes individual vacuum-sealing using cleanroom-compatible materials to ensure surface integrity during transportation.

What are standard delivery timelines?

Standard specification orders typically ship within 2-4 weeks, while customized requirements generally require 4-6 weeks for fulfillment.

Why choose ZMSH company

Complete production chain from cutting to final cleaning and packing.

Capability to reclaim wafers with diameters 4-inch—12-inch.

20 year experience of wafering and reclaiming of monocrystalline electronic materials

ZMSH Technology can provide customers with imported and domestic high-quality conductive, 2-6inch semi-insulating and HPSI (High Purity Semi-insulating) SiC substrates in batches; In addition, it can provide customers with homogeneous and heterogeneous silicon carbide epitaxial sheets, and can also be customized according to the specific needs of customers, with no minimum order quantity.