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4-Inch C-Plane SSP Sapphire Wafer for GaN / III-Nitride Epitaxy

Nombre De La Marca:	ZMSH
MOQ:	10 piezas
Precio:	Pricing is subject to market fluctuations
Tiempo De Entrega:	2-4 semanas
Condiciones De Pago:	T/T

Información detallada

Descripción de producto

Información detallada

Lugar de origen:

Porcelana

Lugar de origen:

Porcelana

Diámetro:

100 mm/4 pulgadas

Espesor:

650±15 micras

Orientación:

Plano C(0001) ± 0,3°

Arco:

<15>

Rugosidad de la superficie frontal:

<0,2 nanómetro

Resistencia al calor:

>1500°C

Detalles de empaquetado:

Personalizable

Capacidad de la fuente:

1000 unidades/mes

Descripción de producto

Product Description

4-Inch C-Plane SSP Sapphire Wafer for GaN / III-Nitride Epitaxy

Overview

We produce 5N (99.999%) Purity monocrystalline Al₂O₃ for advanced semiconductor, optoelectronic, and optical applications.

These substrates are polished on a single side for excellent surface smoothness (Ra ≤ 0.2 nm). These substrates offer exceptional thermal stability (>1500 °C), high optical transmittance (~86–89% at 550 nm), and tight thickness uniformity (TTV ≤20 µm). They are ideal for LED epitaxial growth, GaN and III-nitride semiconductor devices, and high-temperature or optical applications.

4-Inch C-Plane SSP Sapphire Wafer for GaN / III-Nitride Epitaxy 1

Key Features

High-purity [5N (99.999%) Purity] single-crystal sapphire (Al₂O₃)
C-plane orientation (0001) with tight ±0.3° tolerance
Single side polished (SSP) surface, front Ra < 0.2 nm
Excellent flatness and low bow (<15 µm)
High thermal and chemical stability for harsh environments
Customizable axis, diameter, and thickness available

Specifications

Parameter	Specification
Diameter	100 mm ± 0.3 mm (4 inch)
Orientation	C-plane (0001), ±0.3°
Thickness	650 µm ± 15 µm
Bow	<15 µm
Front Surface	Single Side Polished (Ra < 0.2 nm)
Back side Roughness	1.0 ± 0.2µm
TTV (Total Thickness Variation)	≤ 20 µm
LTV (Local Thickness Variation)	≤ 20 µm
Warp	≤ 20 µm
Material	>99.999% high-purity Al₂O₃

Mechanical & Thermal Properties

Mohs hardness: 9 (second only to diamond)
Thermal conductivity: 25 W/m·K
Melting point: 2045°C
Low thermal expansion ensures dimensional stability

Applications

Substrate for GaN, AlN, and III-V or II-VI epitaxial growth
Blue, green, white and UV LED production
Laser diode (LD) substrates
Infrared (IR) optical components and windows
High-precision optics and microelectronics
Watch crystals&smartphone covers

Why Choose C-Plane Sapphire?

Sapphire substrate is ideal for high-performance optical and electronic applications. Sapphire offers exceptional hardness (Mohs 9), high thermal stability up to ~1500 °C, and excellent chemical resistance, a perfect choice for demanding environments such as during the MOCVD and MBE crystalline growth procedures. Its c-plane strucgture is also reasonably compatible with the crystal structure of III-nitrides, facilitating epitaxial alignment and uniform crystal growth.

Packaging & Shipping

25 wafers in one cassette box by vacuum bag or customized method upon request

FAQ

Q: What is the optical transmittance range?
A: Transparent from ~200 nm (UV) to ~5000 nm (mid-IR).

Q: Is the wafer conductive?
A: No — sapphire is an insulator, ideal for preventing leakage currents in electronics.

Q: Can the wafer be customized?

A: Yes, we accept custom diameters, thicknesses, and axis orientation according to client specifications.

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